| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 117 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 117 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 117 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.28 mm |
| Size-Width | 4.82 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NGTG15N60S1EG is a 600V Insulated Gate Bipolar Transistor (IGBT) well suited for motor drive control and other hard switching applications. The IGBT features a robust and cost effective Non-Punch Through (NPT) Trench construction and provides superior performance in demanding switching applications.
● Low on state voltage and minimal switching loss
● Low saturation voltage resulting in low conduction loss
● Low switching loss in higher frequency applications
● 5µs Short-circuit capability
ON Semiconductor
9 Pages / 0.12 MByte
ON Semiconductor
22 Pages / 2.39 MByte
ON Semiconductor
13 Pages / 0.7 MByte
ON Semiconductor
Trans IGBT Chip N-CH 650V 30A 117000mW 3Pin(3+Tab) TO-220 Tube
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