| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 160 MHz |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Number of Positions | 4 Position |
| Polarity | PNP |
| Power Dissipation | 2 W |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| Continuous Collector Current | 3A |
| hFE Min | 200 @1A, 1V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.5 mm |
| Size-Width | 3.5 mm |
| Size-Height | 1.63 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The NJT4030PT1G is a 3A bipolar PNP Power Transistor ideal device for high speed switching applications where power saving is a concern. It is the combination of low saturation voltage and high gain.
● Low collector-emitter saturation voltage
● High DC current gain
● High current-gain bandwidth product
● Halogen-free
● Minimized power loss
● Very low current requirements
● Ideal for high frequency designs
● AEC-Q101 qualified and PPAP capable
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