| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 30 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 150 W |
| Breakdown Voltage (Collector to Emitter) | 250 V |
| Continuous Collector Current | 15A |
| hFE Min | 75 @3A, 5V |
| hFE Max | 150 |
| Input Power (Max) | 150 W |
| DC Current Gain (hFE) | 75 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 150000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 15.8 mm |
| Size-Width | 5 mm |
| Size-Height | 20.1 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
The NJW0302G is a PNP complementary Bipolar Power Transistor with superior gain linearity and safe operating area performance. This transistor is ideal for high fidelity audio amplifier output stages and other linear applications.
● Complement to NJW0281G
● Exceptional Safe Operating Area
● Gain Matching within 10% from 50 mA to 3 A
● Excellent Gain Linearity
● High BVCEO
● High Frequency
● Reliable Performance at Higher Powers
● Accurate Reproduction of Input Signal
● Greater Dynamic Range
● High Amplifier Bandwidth
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