| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 30 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 200 W |
| Breakdown Voltage (Collector to Emitter) | 250 V |
| Continuous Collector Current | 15A |
| hFE Min | 75 |
| hFE Max | 75 |
| Input Power (Max) | 200 W |
| DC Current Gain (hFE) | 45 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 200 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 15.8 mm |
| Size-Width | 5 mm |
| Size-Height | 20.1 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
The superior gain linearity and safe operating area performance of the Bipolar Power Transistor makes it ideal for high fidelity audio amplifier output stages and other linear applications.
●Features | | Benefits
●---|---|---
● | | | | |
● Exceptional Safe Operating Area
●| |
● Reliable performance at higher powers
● NPN/PNP Gain Matching within 10% from 50mA to 5A
●| |
● Symmetrical characteristics in complementary configurations
● Excellent Gain Linearity
●| |
● Accurate reproduction of input signal
● High VCE
●| |
● Greater dynamic range
● High frequency
●| |
● High amplifier bandwidth
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