| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 120 MHz |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 4 Position |
| Polarity | PNP |
| Power Dissipation | 2 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 3A |
| hFE Min | 120 @500mA, 2V |
| Input Power (Max) | 800 mW |
| DC Current Gain (hFE) | 150 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Jump-start your electronic circuit design with this versatile PNP NSS1C200MZ4T1G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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