| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 110 MHz |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 490 mW |
| Gain Bandwidth Product | 110 MHz |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 3A |
| hFE Min | 120 @500mA, 2V |
| hFE Max | 360 |
| Input Power (Max) | 490 mW |
| DC Current Gain (hFE) | 40 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 710 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.04 mm |
| Size-Width | 1.3 mm |
| Size-Height | 1.11 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN NSS1C201LT1G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 710 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.
ON Semiconductor
6 Pages / 0.07 MByte
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