| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 350 MHz |
| Number of Pins | 3 Pin |
| Case/Package | SC-89-3 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 255 mW |
| Input Capacitance | 40 pF |
| Breakdown Voltage (Collector to Emitter) | 20 V |
| Continuous Collector Current | 2A |
| hFE Min | 200 @100mA, 2V |
| Input Power (Max) | 300 mW |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The versatility of this NPN NSS20101JT1G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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