TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 150 MHz |
Number of Pins | 3 Pin |
Case/Package | SOT-23-3 |
Halogen Free Status | Halogen Free |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 540 mW |
Breakdown Voltage (Collector to Emitter) | 20 V |
Continuous Collector Current | 2A |
hFE Min | 200 @500mA, 2V |
Input Power (Max) | 460 mW |
DC Current Gain (hFE) | 200 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 540 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2.9 mm |
Size-Width | 1.3 mm |
Size-Height | 0.94 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Look no further than ON Semiconductor"s NPN NSS20201LT1G general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 540 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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