| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 100 MHz |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 540 mW |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 2A |
| hFE Min | 150 @500mA, 2V |
| Input Power (Max) | 460 mW |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 540 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.04 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1.01 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 3000 |
The NSS60200LT1G is a 4A PNP Bipolar Transistor designed for use in low voltage and high speed switching applications where affordable efficient energy control is important. It is a miniature surface-mount device featuring ultra-low saturation voltage VCE(sat) and high current gain capability. In the automotive industry it can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUs control outputs and the linear gain (Beta) makes it ideal components in analogue amplifiers.
● ESD robust
● High current gain
● High cut-off frequency
● Low profile package
● Improved circuit efficiency
● Decreased battery charge time
● Reduce component count
● High frequency switching
● Smaller portable product
● No distortion
● AECQ101 qualified and PPAP capable
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