| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 100 MHz |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 540 mW |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 2A |
| hFE Min | 150 @1A, 2V |
| hFE Max | 350 |
| Input Power (Max) | 460 mW |
| DC Current Gain (hFE) | 160 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 540 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 3000 |
The NSS60201LT1G is a 4A NPN Bipolar Transistor designed for use in low voltage and high speed switching applications where affordable efficient energy control is important. It is a miniature surface-mount device featuring ultra-low saturation voltage VCE(sat) and high current gain capability.
● ESD robust
● High current gain
● High cut-off frequency
● Low profile package
● Linear gain (Beta)
● Improved circuit efficiency
● Decreased battery charge time
● Reduce component count
● High frequency switching
● Smaller portable product
● No distortion
● AECQ101 qualified and PPAP capable
ON Semiconductor
2 Pages / 0.19 MByte
ON Semiconductor
8 Pages / 0.11 MByte
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5 Pages / 0.12 MByte
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5 Pages / 0.31 MByte
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