| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 100 MHz |
| Number of Pins | 6 Pin |
| Case/Package | SOT-563 |
| Number of Positions | 6 Position |
| Polarity | PNP |
| Power Dissipation | 661 mW |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| Continuous Collector Current | 0.1A |
| hFE Min | 420 @2mA, 5V |
| Input Power (Max) | 500 mW |
| DC Current Gain (hFE) | 520 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 661 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 1.7 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Use this versatile PNP NST30010MXV6T1G GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 661 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.
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