| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 200 MHz |
| Number of Pins | 3 Pin |
| Case/Package | SOT-1123-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 347 mW |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| Continuous Collector Current | 0.2A |
| hFE Min | 100 @10mA, 1V |
| hFE Max | 300 |
| Input Power (Max) | 290 mW |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 347 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 8000 |
Implement this versatile NPN NST3904F3T5G GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 347 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
ON Semiconductor
4 Pages / 0.09 MByte
ON Semiconductor
11 Pages / 0.16 MByte
ON Semiconductor
5 Pages / 0.11 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
