NTB18N06T4G Datasheet PDF - ON Semiconductor

Manufacturer:	ON Semiconductor
Category:	MOSFETs
Case Package:	TO-263-3
Description:	Trans MOSFET N-CH 60V 15A 3Pin(2+Tab) D2PAK T/R
Documentation:	NTB18N06T4G Datasheet (8 Pages)Pinout Diagram on1 PageHot Package Outline Dimension on7 Page 8 Page Package Footprint Pad Layout on7 Page Part Numbering System on1 Page 2 Page 8 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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NTB18N06T4G Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	3 Pin
Voltage Rating (DC)	60.0 V
Current Rating	15.0 A
Case/Package	TO-263-3
Drain to Source Resistance (on) (Rds)	90.0 mΩ
Polarity	N-Channel
Power Dissipation	48.4W (Tc)
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	15.0 A
Rise Time	25.0 ns
Input Capacitance (Ciss)	450pF @25V(Vds)
Power Dissipation (Max)	48.4W (Tc)