| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 45.0 A |
| Case/Package | D2PAK-263 |
| Drain to Source Resistance (on) (Rds) | 26.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 125 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 1.72 nF |
| Gate Charge | 46.0 nC |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 45.0 A |
| Rise Time | 101 ns |
| Input Capacitance (Ciss) | 1224pF @25V(Vds) |
| Fall Time | 106 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 125000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Minimum Packing Quantity | 800 |
Power MOSFET 45 Amps, 60 Volts
●N−Channel TO−220 and D2PAK
●Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
●Features
●• Higher Current Rating
●• Lower RDS(on)
●• Lower VDS(on)
●• Lower Capacitances
●• Lower Total Gate Charge
●• Tighter VSD Specification
●• Lower Diode Reverse Recovery Time
●• Lower Reverse Recovery Stored Charge
●• Pb−Free Packages are Available
●Typical Applications
●• Power Supplies
●• Converters
●• Power Motor Controls
●• Bridge Circuits
ON Semiconductor
8 Pages / 0.07 MByte
ON Semiconductor
10 Pages / 0.08 MByte
ON Semiconductor
D2PAK-3 N-CH 60V 45A 28mΩ
ON Semiconductor
D2PAK-3 N-CH 60V 45A 26mΩ
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