NTB52N10T4G Datasheet PDF - ON Semiconductor

Manufacturer:	ON Semiconductor
Category:	MOSFETs
Case Package:	TO-263-3
Description:	Trans MOSFET N-CH 100V 52A 3Pin(2+Tab) D2PAK T/R
Documentation:	NTB52N10T4G Datasheet (8 Pages)Pinout Diagram on1 PageHot Package Outline Dimension on7 Page Package Footprint Pad Layout on7 Page Part Numbering System on1 Page 8 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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NTB52N10T4G Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	3 Pin
Voltage Rating (DC)	100 V
Current Rating	52.0 A
Case/Package	TO-263-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	30 mΩ
Polarity	N-Channel
Power Dissipation	178 W
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	52.0 A
Rise Time	95 ns
Input Capacitance (Ciss)	3150pF @25V(Vds)
Input Power (Max)	2 W
Fall Time	100 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	2W (Ta), 178W (Tc)