| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 20.0 A |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.023 Ω |
| Polarity | N-Channel |
| Power Dissipation | 74 W |
| Threshold Voltage | 1.6 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 20.0 A |
| Rise Time | 137 ns |
| Input Capacitance (Ciss) | 1260pF @25V(Vds) |
| Input Power (Max) | 1.75 W |
| Fall Time | 31 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.75W (Ta), 74W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.38 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NTD20N03L27T4G is a N-channel logic level vertical general purpose Power MOSFET provides the best of design in a power package. Avalanche energy issues make this part is an ideal design. The drain-to-source diode has an ideal fast but soft recovery.
● Ultra-low RDS (ON), single base, advanced technology
● Diode is characterized for use in bridge circuits
● IDSS and VDS (ON) Specified at elevated temperatures
● High avalanche energy specified
● ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
● -55 to 175°C Operating temperature range
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