| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -15.0 A |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.143 Ω |
| Polarity | P-Channel |
| Power Dissipation | 65 W |
| Threshold Voltage | 1.5 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 15.5 A |
| Rise Time | 90 ns |
| Input Capacitance (Ciss) | 1190pF @25V(Vds) |
| Input Power (Max) | 65 W |
| Fall Time | 70 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 65000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.38 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The NTD20P06LT4G is a -60V Single P-channel Power MOSFET designed for bridge circuits, power supplies and power motor controls as well as DC-DC conversion. The MOSFET withstands high energy in avalanche and commutation modes.
● Low gate charge for fast switching
● AEC-Q101 qualified
ON Semiconductor
7 Pages / 0.14 MByte
ON Semiconductor
8 Pages / 0.26 MByte
ON Semiconductor
2 Pages / 0.02 MByte
ON Semiconductor
1 Pages / 0.15 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
