| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 24.0 A |
| Case/Package | TO-251-3 |
| Drain to Source Resistance (on) (Rds) | 32.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 62.5 W |
| Input Capacitance | 1.20 nF |
| Gate Charge | 48.0 nC |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 24.0 A |
| Rise Time | 24 ns |
| Input Capacitance (Ciss) | 1200pF @25V(Vds) |
| Input Power (Max) | 1.36 W |
| Fall Time | 27 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.36 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 6.73 mm |
| Size-Width | 2.38 mm |
| Size-Height | 6.35 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
N-Channel 60V 24A (Ta) 1.36W (Ta), 62.5W (Tj) Through Hole I-PAK
ON Semiconductor
9 Pages / 0.07 MByte
ON Semiconductor
9 Pages / 0.08 MByte
ON Semiconductor
8 Pages / 0.11 MByte
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