NTD2955-1G Datasheet PDF - ON Semiconductor

Manufacturer:	ON Semiconductor
Category:	MOSFETs
Case Package:	TO-251-3
Description:	IPAK P-CH 60V 12A
Documentation:	NTD2955-1G Datasheet (7 Pages)Pinout Diagram on1 PageHot Package Outline Dimension on6 Page 7 Page Package Footprint Pad Layout on6 Page Part Numbering System on1 Page 5 Page 7 Page NTD2955-1G Application Note (8 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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NTD2955-1G Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Number of Pins	3 Pin
Voltage Rating (DC)	-60.0 V
Current Rating	-12.0 A
Case/Package	TO-251-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.155 Ω
Polarity	P-Channel
Power Dissipation	55 W
Input Capacitance	750 pF
Gate Charge	30.0 nC
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	12.0 A
Rise Time	45 ns
Input Capacitance (Ciss)	750pF @25V(Vds)
Input Power (Max)	55 W
Fall Time	48 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	55 W