| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 25.0 A |
| Case/Package | TO-251-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.089 Ω |
| Polarity | N-Channel |
| Power Dissipation | 48 W |
| Threshold Voltage | 1.6 V |
| Input Capacitance | 440 pF |
| Gate Charge | 20.0 nC |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | ±15.0 V |
| Continuous Drain Current (Ids) | 12.0 A |
| Rise Time | 104 ns |
| Input Capacitance (Ciss) | 440pF @25V(Vds) |
| Input Power (Max) | 1.5 W |
| Fall Time | 40.5 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.38 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The NTD3055L104-1G is a N-channel Power MOSFET designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
● Lower RDS (ON)
● Lower VDS (ON)
● Lower and tighter VSD
● Lower diode reverse recovery time
● Lower reverse recovery stored charge
● -55 to 175°C Operating temperature range
ON Semiconductor
9 Pages / 0.15 MByte
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