NTD4809N-35G Datasheet PDF - ON Semiconductor

Manufacturer:	ON Semiconductor
Category:	MOSFETs
Case Package:	TO-251-3
Description:	IPAK N-CH 30V 13.1A
Documentation:	NTD4809N-35G Datasheet (9 Pages)Pinout Diagram on1 PageHot Package Outline Dimension on7 Page 8 Page 9 Page Package Footprint Pad Layout on7 Page Part Numbering System on1 Page 6 Page 9 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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NTD4809N-35G Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-251-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	9 mΩ
Polarity	N-Channel
Power Dissipation	2 W
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Continuous Drain Current (Ids)	58.0 A
Input Capacitance (Ciss)	1456pF @12V(Vds)
Input Power (Max)	1.3 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	1.4W (Ta), 52W (Tc)