NTD4809NH-1G Datasheet PDF - ON Semiconductor

Manufacturer:	ON Semiconductor
Category:	MOSFETs
Case Package:	TO-251-3
Description:	IPAK N-CH 30V 11.5A
Documentation:	NTD4809NH-1G Datasheet (8 Pages)Pinout Diagram on1 PageHot Package Outline Dimension on7 Page 8 Page Package Footprint Pad Layout on7 Page Part Numbering System on1 Page 6 Page 8 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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NTD4809NH-1G Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-251-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	9 mΩ
Polarity	N-Channel
Power Dissipation	52 W
Threshold Voltage	2.1 V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Continuous Drain Current (Ids)	58.0 A
Input Capacitance (Ciss)	2155pF @12V(Vds)
Input Power (Max)	1.3 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.3W (Ta), 52W (Tc)