| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-251-3 |
| Polarity | N-Channel |
| Power Dissipation | 71 W |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 19.0 A |
| Rise Time | 16 ns |
| Input Capacitance (Ciss) | 1000pF @25V(Vds) |
| Input Power (Max) | 71 W |
| Fall Time | 40 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 71W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 6.73 mm |
| Size-Width | 2.38 mm |
| Size-Height | 7.62 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Compared to traditional transistors, NTD6416ANL-1G power MOSFETs, developed by ON Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 71000 mW. This product comes in rail packaging to keep individual parts separated and protected. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
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