| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 300 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-18 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 800 mW |
| Breakdown Voltage (Collector to Base) | 75.0 V |
| Breakdown Voltage (Collector to Emitter) | 40.0 V |
| Continuous Collector Current | 0.8A |
| DC Current Gain (hFE) | 300 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 400 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Material | Silicon |
Description:
●The NTE123A (NPN) and NTE159M (PNP) are widely used “Industry Standard” complementary transistors in a TO18 type case designed for applications such as medium–speed switching and amplifiers from audio to VHF frequencies.
●Features:
●Low Collector Saturation Voltage: 1V (Max)
●High Current Gain–Bandwidth Product: fT = 300MHz (Min) @ IC 20mA
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