| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 250 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-92 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 625 mW |
| Breakdown Voltage (Collector to Base) | 60.0 V (min) |
| Breakdown Voltage (Collector to Emitter) | 40.0 V |
| Continuous Collector Current | 0.6A |
| DC Current Gain (hFE) | 300 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 350 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Material | Silicon |
The NTE123AP is a silicon NPN Transistor designed for use in audio amplifier and switch applications.
● 20ns Rise time
● 30ns Fall time
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