| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 20.0 V |
| Current Rating | 915 mA |
| Case/Package | SC-89-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.127 Ω |
| Polarity | N-Channel |
| Power Dissipation | 300 mW |
| Threshold Voltage | 760 mV |
| Input Capacitance | 110pF @16V |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 26 V |
| Breakdown Voltage (Gate to Source) | ±6.00 V |
| Continuous Drain Current (Ids) | 915 mA |
| Rise Time | 4.4 ns |
| Input Capacitance (Ciss) | 110pF @16V(Vds) |
| Input Power (Max) | 300 mW |
| Fall Time | 7.6 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 1.7 mm |
| Size-Width | 0.95 mm |
| Size-Height | 0.8 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NTE4153NT1G is a N-channel Small Signal MOSFET offers 20V drain source voltage and 915mA continuous drain current. It is suitable for load/power switches, power supply converter circuits, battery management, portables like cell phones, PDAs, digital cameras and pagers.
● Low RDS (ON) improving system efficiency
● Low threshold voltage
● ESD protected gate
● -55 to 150°C Operating temperature range
ON Semiconductor
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ON Semiconductor
Small Signal MOSFET 20V 915mA 230mOhm Single N-Channel SC-89 with ESD Protection, SC-89, 3 LEAD, 3000-REEL
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