| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -6.00 A |
| Case/Package | TO-261-4 |
| Drain to Source Resistance (on) (Rds) | 0.05 Ω |
| Polarity | P-Channel |
| Power Dissipation | 8.3 W |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Gate to Source) | ±8.00 V |
| Continuous Drain Current (Ids) | 10.0 A |
| Rise Time | 25.0 ns |
| Input Capacitance (Ciss) | 1200pF @16V(Vds) |
| Input Power (Max) | 8.3 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 8.3W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.65 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
As an alternative to traditional transistors, the NTF6P02T3G power MOSFET from ON Semiconductor can be used to both amplify and switch electronic signals. Its maximum power dissipation is 8300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
ON Semiconductor
6 Pages / 0.1 MByte
ON Semiconductor
17 Pages / 0.27 MByte
ON Semiconductor
9 Pages / 0.53 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
