| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -2.00 A |
| Case/Package | SOT-23-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.058 Ω |
| Polarity | P-Channel |
| Power Dissipation | 2 W |
| Input Capacitance | 565 pF |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Gate to Source) | ±12.0 V |
| Continuous Drain Current (Ids) | 2.00 A |
| Rise Time | 45 ns |
| Input Capacitance (Ciss) | 565pF @5V(Vds) |
| Input Power (Max) | 500 mW |
| Fall Time | 50 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.1 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NTGS3443T1G is a P-channel Power MOSFET offers -20V drain source voltage and -2.2A continuous drain current. It is suitable for power management in portable and battery-powered products, cellular and cordless telephones and PCMCIA cards.
● Ultra-low RDS (ON)
● Higher efficiency extending battery life
● Miniature surface-mount package
● -55 to 150°C Operating temperature range
ON Semiconductor
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ON Semiconductor
MOSFET, Power; P-Ch; VDSS -20VDC; RDS(ON) 0.058Ω; ID -2.2A; TSOP-6; PD 0.5W(1/2W); VGS +/-1
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