| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | -8.00 V |
| Current Rating | -3.40 A |
| Case/Package | SMD-8 |
| Drain to Source Resistance (on) (Rds) | 100 mΩ |
| Polarity | P-Channel, Dual P-Channel |
| Power Dissipation | 1.1 W |
| Drain to Source Voltage (Vds) | 8 V |
| Breakdown Voltage (Gate to Source) | ±8.00 V |
| Continuous Drain Current (Ids) | 4.60 A |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 715pF @6.4V(Vds) |
| Input Power (Max) | 1.1 W |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1100 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.05 mm |
| Size-Width | 1.65 mm |
| Size-Height | 1.05 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Power MOSFET Features • Offers an Ultra Low RDS(on) Solution in the ChipFET Package • Miniature ChipFET Package 40% Smaller Footprint than TSOP−6 making it an Ideal Device for Applications where Board Space is at a Premium • Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin Environments such as Portable Electronics • Designed to Provide Low RDS(on) at Gate Voltage as Low as 1.8 V, the Operating Voltage used in many Logic ICs in Portable Electronics • Simplifies Circuit Design since Additional Boost Circuits for Gate Voltages are not Required • Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels using the same Basic Topology • Pb−Free Package is Available Applications • Optimized for Battery and Load Management Applications in Portable Equipment such as MP3 Players, Cell Phones, Digital Cameras, Personal Digital Assistant and other Portable Applications • Charge Control in Battery Chargers • Buck and Boost Converters
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