TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Voltage Rating (DC) | 20.0 V |
Current Rating | 2.90 A |
Case/Package | SMD-8 |
Number of Channels | 2 Channel |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.064 Ω |
Polarity | N-Channel, P-Channel |
Power Dissipation | 1.1 W |
Threshold Voltage | 1.5 V |
Drain to Source Voltage (Vds) | 20 V |
Continuous Drain Current (Ids) | 3.90 A |
Input Capacitance (Ciss) | 165pF @10V(Vds) |
Input Power (Max) | 1.1 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3.1 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 3.05 mm |
Size-Width | 1.65 mm |
Size-Height | 1.05 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NTHD3100CT1G is a N/P-channel Complementary MOSFET ideal for portable battery powered products. The device is designed for DC-to DC conversion circuits, load switch applications requiring level shift and drive small brushless DC motor applications.
● Small size
● 40% Smaller then TSOP-6 package
● Trench P-channel for low ON-resistance
● Low gate charge N-channel for test switching
ON Semiconductor
8 Pages / 0.14 MByte
ON Semiconductor
9 Pages / 0.47 MByte
ON Semiconductor
9 Pages / 0.53 MByte
ON Semiconductor
1 Pages / 0.15 MByte
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