TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Current Rating | 630 mA |
Case/Package | SC-88-6 |
Number of Outputs | 1 Output |
Output Current | 1 A |
Number of Channels | 2 Channel |
Number of Positions | 6 Position |
Drain to Source Resistance (on) (Rds) | 0.175 Ω |
Polarity | P-Channel |
Power Dissipation | 400 mW |
Threshold Voltage | 1 V |
Drain to Source Voltage (Vds) | 8 V |
Breakdown Voltage (Gate to Source) | 1.00 V |
Continuous Drain Current (Ids) | 1.30 A |
Input Voltage (Min) | 1.8 V |
Output Current (Min) | 1 A |
Input Power (Max) | 400 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 400 mW |
Input Voltage | 8 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2.2 mm |
Size-Width | 1.25 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NTJD1155LT1G is a P and N-channel Power MOSFET particularly suited for portable electronic equipment"s where low control signals, low battery voltages and high load currents are needed. The P-channel device is specifically designed as a load switch using state-of-the-art Trench technology. The N-channel, with an external resistor (R1), functions as a level-shift to drive the P-channel. The N-channel MOSFET has internal ESD protection and it can be driven by logic signals as low as 1.5V. The NTJD1155L operates on supply lines from 1.8 to 8V and can drive loads up to 1.3A with 8V applied to both VIN and VON/OFF.
● Extremely low RDS (ON) P-channel load switch MOSFET
● Level shift MOSFET is ESD protected
● Low profile, small footprint package
● 1.5 to 8V ON/OFF range
● -55 to 150°C Operating junction temperature range
ON Semiconductor
5 Pages / 0.1 MByte
ON Semiconductor
8 Pages / 0.19 MByte
ON Semiconductor
3 Pages / 0.05 MByte
ON Semiconductor
Small Signal MOSFET -8V -1.3A 175mOhm Dual P-Channel SC−88 with Level-Shift, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
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