| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 250 mA |
| Case/Package | SC-70-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 1 Ω |
| Polarity | Dual N-Channel |
| Power Dissipation | 272 mW |
| Threshold Voltage | 1.2 V |
| Input Capacitance | 20pF @5V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 250 mA |
| Rise Time | 23 ns |
| Input Capacitance (Ciss) | 33pF @5V(Vds) |
| Input Power (Max) | 272 mW |
| Fall Time | 82 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.72 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.2 mm |
| Size-Width | 1.35 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NTJD4001NT1G is a dual N-channel small signal MOSFET designed for Li-Ion battery supplied devices like cell phones, PDAs and DSC. It is suitable for low side load switch, buck converters and level shift applications.
● Low gate charge for fast switching
● ESD protected gate
ON Semiconductor
5 Pages / 0.06 MByte
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3 Pages / 0.05 MByte
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6 Pages / 0.04 MByte
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1 Pages / 0.15 MByte
ON Semiconductor
MOSFET; Dual N-Ch; VDSS 30V; RDS(ON) 1Ω; ID 250mA; SOT-363; PD 272mW; VGS +/-20V; -55d
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