| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Current Rating | 630 mA |
| Case/Package | SC-70-6 |
| Number of Channels | 2 Channel |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.29 Ω |
| Polarity | N-Channel, P-Channel |
| Power Dissipation | 270 mW |
| Threshold Voltage | 920 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 775 mA |
| Input Capacitance (Ciss) | 46pF @20V(Vds) |
| Input Power (Max) | 270 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 550 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.2 mm |
| Size-Width | 1.35 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NTJD4105CT1G is a -8/20V P and N-channel Small Signal MOSFET designed with low RDS(on) for minimum footprint and increased circuit efficiency. The low RDS (on) performance is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras and PDAs.
● Complementary N and P channel device
● Leading -8V trench for low RDS(on) performance
● ESD protected gate- Class 1 ESD rating
● 460°C/W Thermal resistance, junction to ambient
ON Semiconductor
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ON Semiconductor
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ON Semiconductor
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