TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Current Rating | 250 mA |
Case/Package | SC-70-6 |
Number of Positions | 6 Position |
Drain to Source Resistance (on) (Rds) | 1 Ω |
Polarity | N-Channel, P-Channel |
Power Dissipation | 270 mW |
Threshold Voltage | 1.2 V |
Input Capacitance | 33.0 pF |
Gate Charge | 1.50 nC |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 250 mA, 880 mA |
Input Capacitance (Ciss) | 33pF @5V(Vds) |
Input Power (Max) | 270 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 270 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2.2 mm |
Size-Width | 1.35 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NTJD4158CT1G is a N/P-channel complementary Small Signal MOSFET designed for cell phones, MP3s, digital cameras and PDAs. It is suitable for DC-to-DC conversion, load management and load switch applications.
● Leading 20V Trench for low RDS (ON) performance
● ESD protected gate
● Small footprint
ON Semiconductor
2 Pages / 0.19 MByte
ON Semiconductor
10 Pages / 0.2 MByte
ON Semiconductor
SC-88 N+P 30V/20V 0.25A/0.88A
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