TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Case/Package | WDFN-6 |
Number of Positions | 6 Position |
Drain to Source Resistance (on) (Rds) | 0.037 Ω |
Polarity | N-Channel, P-Channel |
Power Dissipation | 2.3 W |
Threshold Voltage | 700 mV |
Drain to Source Voltage (Vds) | 20 V |
Breakdown Voltage (Gate to Source) | ±8.00 V |
Continuous Drain Current (Ids) | 3.80 A, 4.60 A |
Input Capacitance (Ciss) | 271pF @10V(Vds) |
Input Power (Max) | 710 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2.3 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2 mm |
Size-Width | 2 mm |
Size-Height | 0.75 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NTLJD3119CTBG is a N/P-channel complementary MOSFET designed for load management devices like PDAs, Cellular Phones and Hard Drives. It is suitable for synchronous DC-to-DC conversion circuits and colour display, camera flash regulator applications.
● Package with exposed drain pad for excellent thermal conduction
● Footprint same as SC-88 package
● Leading Edge Trench technology for low ON-resistance
● 1.8V Gate threshold voltage
● Low profile (<0.8mm) for easy fit in thin environments
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