| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 5 Pin |
| Case/Package | SO-FL-8 |
| Number of Channels | 1 Channel |
| Number of Positions | 5 Position |
| Drain to Source Resistance (on) (Rds) | 0.0013 Ω |
| Polarity | N-Channel |
| Power Dissipation | 125 W |
| Threshold Voltage | 1.5 V |
| Input Capacitance | 5600pF @12V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Continuous Drain Current (Ids) | 191 A |
| Rise Time | 34 ns |
| Input Capacitance (Ciss) | 5600pF @12V(Vds) |
| Input Power (Max) | 910 mW |
| Fall Time | 17 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 910mW (Ta), 125W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.9 mm |
| Size-Width | 5.8 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NTMFS4833NT1G is a N-channel Power MOSFET offers 30V drain source voltage and 26A continuous drain current. It is suitable for CPU power delivery, DC-to-DC converters and low side switching applications.
● Low RDS (ON) to minimize conduction losses
● Low capacitance to minimize driver losses
● Optimized gate charge to minimize switching losses
● -55 to 150°C Operating junction temperature range
ON Semiconductor
9 Pages / 0.23 MByte
ON Semiconductor
5 Pages / 0.08 MByte
ON Semiconductor
8 Pages / 0.11 MByte
ON Semiconductor
2 Pages / 0.02 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
