TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Number of Channels | 1 Channel |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.0027 Ω |
Polarity | N-Channel |
Power Dissipation | 48 W |
Threshold Voltage | 1.63 V |
Drain to Source Voltage (Vds) | 30 V |
Rise Time | 20 ns |
Input Capacitance (Ciss) | 4850pF @15V(Vds) |
Input Power (Max) | 930 mW |
Fall Time | 6.6 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 930mW (Ta), 48W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 5.1 mm |
Size-Width | 6.1 mm |
Size-Height | 1.1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NTMFS4935NT1G is a N-channel Power MOSFET offers 30V drain source voltage and 21.8A continuous drain current. It is suitable for CPU power delivery and DC-to-DC converter applications.
● Low RDS (ON) to minimize conduction losses
● Low capacitance to minimize driver losses
● Optimized gate charge to minimize switching losses
● Halogen-free
● -55 to 150°C Operating junction temperature range
ON Semiconductor
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Power MOSFET 30V 93A 3.2mOhm Single N-Channel SO-8FL, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL
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