| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 5 Pin |
| Case/Package | DFN-5 |
| Number of Positions | 5 Position |
| Drain to Source Resistance (on) (Rds) | 0.0045 Ω |
| Polarity | N-CH |
| Power Dissipation | 23.2 W |
| Threshold Voltage | 1.7 V |
| Input Capacitance | 1264 pF |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 16.7A |
| Rise Time | 32.7 ns |
| Input Capacitance (Ciss) | 1264pF @15V(Vds) |
| Input Power (Max) | 920 mW |
| Fall Time | 6.2 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 920mW (Ta), 23.2W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Height | 1.05 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This NTMFS4955NT1G power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 2700 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
ON Semiconductor
8 Pages / 0.11 MByte
ON Semiconductor
8 Pages / 0.16 MByte
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