NTMFS4C09NT1G Datasheet PDF - ON Semiconductor

Manufacturer:	ON Semiconductor
Category:	MOSFETs
Case Package:	SO-FL-8
Description:	SO-FL N-CH 30V 16.4A
Documentation:	NTMFS4C09NT1G Datasheet (7 Pages)Package Outline Dimension on7 Page Package Footprint Pad Layout on7 Page Part Numbering System on1 Page 7 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

Click page to view the detail

NTMFS4C09NT1G Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	5 Pin
Case/Package	SO-FL-8
Number of Channels	1 Channel
Number of Positions	5 Position
Drain to Source Resistance (on) (Rds)	0.0046 Ω
Polarity	N-Channel
Power Dissipation	25.5 W
Threshold Voltage	2.1 V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Continuous Drain Current (Ids)	16.4A
Rise Time	32 ns
Input Capacitance (Ciss)	1252pF @15V(Vds)
Input Power (Max)	760 mW
Fall Time	6 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	760mW (Ta), 25.5W (Tc)