| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Dissipation | 313 W |
| Drain to Source Voltage (Vds) | 650 V |
| Rise Time | 27 ns |
| Input Capacitance (Ciss) | 3410pF @400V(Vds) |
| Fall Time | 5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 313000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
SuperFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SuperFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
●Features | | Benefits
●---|---|---
● | | | | |
● 700 V @ TJ = 150 oC
●| |
● Higher system reliability at low temperature operation
● Ultra Low Gate Charge (Typ. Qg = 81 nC)
●| |
● Lower switching loss
● Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
●| |
● Lower switching loss
● Optimized Capacitance
●| |
● Lower peak Vds and lower Vgs oscillation
● Excellent body diode performance (low Qrr, robust body diode)
●| |
● Higher system reliability in LLC and Phase shift full bridge circuit
● Typ. RDS(on) = 70 mΩ
●| |
● 100% Avalanche Tested
●| |
● RoHS Compliant
●| |
ON Semiconductor
3 Pages / 0.7 MByte
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2 Pages / 0.1 MByte
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Trans MOSFET N-CH 650V 40A 3Pin(3+Tab) TO-220 Tube
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