TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -20.0 V |
Current Rating | -400 mA |
Case/Package | SOT-23-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.8 Ω |
Polarity | P-Channel |
Power Dissipation | 225 mW |
Drain to Source Voltage (Vds) | 20 V |
Breakdown Voltage (Drain to Source) | 20 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 400 mA |
Rise Time | 6 ns |
Maximum Forward Voltage (Max) | 1 V |
Input Capacitance (Ciss) | 70pF @5V(Vds) |
Input Power (Max) | 225 mW |
Fall Time | 4 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 225 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3.04 mm |
Size-Width | 1.4 mm |
Size-Height | 1.01 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NTR0202PLT1G is a P-channel Power MOSFET offers -20V drain source voltage and -0.4A continuous drain current. It is suitable for DC-to-DC converters, printers, PCMCIA cards, cellular and cordless telephones.
● Low RDS (ON) provides higher efficiency and extends battery life
● Miniature surface-mount package saves board space
● -55 to 150°C Operating temperature range
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