| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -3.20 A |
| Case/Package | SOT-23-3 |
| Power Rating | 0.21 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.07 Ω |
| Polarity | P-Channel |
| Power Dissipation | 730 mW |
| Threshold Voltage | 720 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Gate to Source) | ±8.00 V |
| Continuous Drain Current (Ids) | 3.20 A, -3.20 A |
| Rise Time | 12.6 ns |
| Input Capacitance (Ciss) | 675pF @10V(Vds) |
| Input Power (Max) | 420 mW |
| Fall Time | 21 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 420mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NTR4101PT1G is a P-channel Trench Power MOSFET offers -20V drain source voltage and -2.4A continuous drain current. It is suitable for charging circuits and battery protection, load management for portables and computing applications.
● Leading -20V Trench for low RDS (ON)
● -1.8V Rated for low voltage gate drive
● Surface-mount for small footprint
● Halogen-free
● -55 to 150°C Operating junction temperature range
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