TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SOT-23-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.045 Ω |
Polarity | N-Channel |
Power Dissipation | 780 mW |
Threshold Voltage | 1 V |
Drain to Source Voltage (Vds) | 30 V |
Breakdown Voltage (Drain to Source) | 30 V |
Continuous Drain Current (Ids) | 2.30 A, 4.00 A |
Rise Time | 9.9 ns |
Input Capacitance (Ciss) | 432pF @15V(Vds) |
Input Power (Max) | 780 mW |
Fall Time | 3.5 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 480mW (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3.04 mm |
Size-Width | 1.4 mm |
Size-Height | 1.01 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NTR4170NT1G is a N-channel Power MOSFET offers 30V drain source voltage and 2.4A continuous drain current. It is suitable for power converters for portables, battery management and load/power switch applications.
● Low RDS (ON)
● Low gate charge
● Low threshold voltage
● -55 to 150°C Operating junction temperature range
ON Semiconductor
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Power MOSFET 30V 4A 55mOhm Single N-Channel SOT-23, SOT-23 (TO-236) 3 LEAD, 3000-REEL
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