| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 270 mA |
| Case/Package | SC-70-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1 Ω |
| Polarity | N-Channel |
| Power Dissipation | 330 mW |
| Threshold Voltage | 1.2 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 270 mA |
| Rise Time | 23 ns |
| Input Capacitance (Ciss) | 33pF @5V(Vds) |
| Input Power (Max) | 330 mW |
| Fall Time | 82 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 330mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.2 mm |
| Size-Width | 1.35 mm |
| Size-Height | 0.9 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NTS4001NT1G is a N-channel Power MOSFET offers 30V drain source voltage and 270A continuous drain current. It is suitable for use in low side load switch, Li-ion battery supplied devices, cell phones, PDAs, DSC, buck converters and level shifts.
● Low gate charge for fast switching
● Small footprint (30% smaller than TSOP-6)
● ESD Protected gate
● -55 to 150°C Operating junction temperature range
ON Semiconductor
12 Pages / 0.08 MByte
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
1 Pages / 0.15 MByte
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