TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Voltage Rating (DC) | 20.0 V |
Current Rating | 540 mA |
Case/Package | SOT-563-6 |
Number of Channels | 2 Channel |
Number of Positions | 6 Position |
Drain to Source Resistance (on) (Rds) | 0.4 Ω |
Polarity | Dual N-Channel |
Power Dissipation | 250 mW |
Threshold Voltage | 1 V |
Input Capacitance | 80 pF |
Drain to Source Voltage (Vds) | 20 V |
Breakdown Voltage (Drain to Source) | 20.0 V |
Breakdown Voltage (Gate to Source) | ±6.00 V |
Continuous Drain Current (Ids) | 540 mA |
Rise Time | 4 ns |
Input Capacitance (Ciss) | 150pF @16V(Vds) |
Input Power (Max) | 250 mW |
Fall Time | 8 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 280 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 1.7 mm |
Size-Width | 1.2 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NTZD3154NT1G is a dual N-channel small signal MOSFET designed for cell phones, digital cameras, PDAs and pagers etc. It is suitable for load/power switches, power supply converter circuits and battery management applications.
● Low RDS (ON) improving system efficiency
● Low threshold voltage
● Small footprint
● ESD protected gate
● Halogen-free
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Trans MOSFET N-CH 20V 0.54A 6Pin SOT-563 T/R
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