| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Current Rating | 540 mA |
| Case/Package | SOT-563-6 |
| Power Rating | 0.25 W |
| Number of Channels | 2 Channel |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.4 Ω |
| Polarity | N-Channel, P-Channel |
| Power Dissipation | 250 mW |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Gate to Source) | ±6.00 V |
| Continuous Drain Current (Ids) | 540 mA |
| Input Capacitance (Ciss) | 150pF @16V(Vds) |
| Input Power (Max) | 250 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 280 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 1.7 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NTZD3155CT1G is a N/P-channel complementary Small Signal MOSFET designed for cell phones, MP3s, digital cameras and PDAs. It is suitable for DC-to-DC conversion circuits, load/power switching with level shift, single or dual cell Li-Ion battery operated systems and high speed circuit applications.
● Leading Trench technology for low RDS (ON) performance
● High efficiency system performance
● Low threshold voltage
● ESD protected gate
● Small footprint
ON Semiconductor
8 Pages / 0.11 MByte
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39 Pages / 2.8 MByte
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2 Pages / 0.29 MByte
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1 Pages / 0.15 MByte
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Small Signal MOSFET 20V 540mA 400mOhm Complementary SOT-563 with ESD Protection, SOT-563, 6 LEAD, 4000-REEL
ON Semiconductor
SOT-563 N+P 20V 0.54A/0.43A
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