NVD5117PLT4G Datasheet PDF - ON Semiconductor

Manufacturer:	ON Semiconductor
Category:	MOSFETs
Case Package:	TO-252-3
Description:	DPAK P-CH 60V 11A
Documentation:	NVD5117PLT4G Datasheet (9 Pages)Package Outline Dimension on7 Page 8 Page Package Footprint Pad Layout on7 Page 8 Page Part Numbering System on1 Page 6 Page 8 Page NVD5117PLT4G Application Note (9 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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NVD5117PLT4G Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.016 Ω
Polarity	P-Channel
Power Dissipation	118 W
Threshold Voltage	1.5 V
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	11A
Rise Time	195 ns
Input Capacitance (Ciss)	4800pF @25V(Vds)
Input Power (Max)	4.1 W
Fall Time	132 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	4.1W (Ta), 118W (Tc)