NVD5865NLT4G Datasheet PDF - ON Semiconductor

Manufacturer:	ON Semiconductor
Category:	MOSFETs
Case Package:	TO-252-3
Description:	Trans MOSFET N-CH 60V 10A 3Pin(2+Tab) DPAK
Documentation:	NVD5865NLT4G Datasheet (6 Pages)Pinout Diagram on1 PageHot Package Outline Dimension on6 Page Package Footprint Pad Layout on6 Page Part Numbering System on1 Page 5 Page 6 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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NVD5865NLT4G Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.013 Ω
Polarity	N-Channel
Power Dissipation	71 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Rise Time	12.4 ns
Input Capacitance (Ciss)	1400pF @25V(Vds)
Input Power (Max)	3.1 W
Fall Time	4.4 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	71 W