| TYPE | DESCRIPTION |
|---|
| Number of Pins | 8 Pin |
| Case/Package | WDFN-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0085 Ω |
| Power Dissipation | 107 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 80 V |
| Rise Time | 32 ns |
| Input Capacitance (Ciss) | 1140pF @40V(Vds) |
| Fall Time | 8 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3200 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
●Features | | Benefits
●---|---|---
● | | | | |
● Low on-resistance
●| |
● minimizes conduction losses
● Low gate charge
●| |
● minimizes switching losses
● u8FL package
●| |
● very small footprint enabling smaller PCBs and modules
● AEC-Q101 Qualified
●| |
● suitable for automotive applications
● Pb−Free
●| |
● RoHS Compliant
● Small Footprint (3x3 mm)
●| |
● Compact Design
ON Semiconductor
6 Pages / 0.07 MByte
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