| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Case/Package | T-1-2 |
| Pin Pitch | 1.27 mm |
| Number of Positions | 2 Position |
| Wavelength | 935 nm |
| Viewing Angle | 25° |
| Peak Wavelength | 935 nm |
| Polarity | NPN |
| Power Dissipation | 100 mW |
| Power Consumption | 100 mW |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| Input Power (Max) | 100 mW |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 100 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Each |
| Material | Silicon |
| Size-Height | 5.08 mm |
| Lead Length | 12.7 mm |
| Operating Temperature | -40℃ ~ 100℃ (TA) |
| Housing Material | Plastic |
The OP505B is an Infrared Selected Silicon NPN Phototransistor moulded in blue tinted epoxy package. The narrow receiving angle provides excellent on-axis coupling. This device is 100% production tested using infrared light for close correlation with Optek"s GaAs and GaAIAs emitters.
● Small package size ideal for space-limited applications
● 0.050" (1.27mm) Lead spacing
TT Electronics/Optek Technology
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